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Article

Feature Articles

Title

STT-RAM Memory Devices

Authors

	Monika Arora - Simon Fraser University
	Tommy Mckinnon - Simon Fraser University
	Brett Heinrich - Simon Fraser University
	Erol Girt - Simon Fraser University
	Ciaran Fowley - Helmholtz-Zentrum Dresden- Rossendorf
	Ewa Kowalska - Helmholtz-Zentrum Dresden- Rossendorf
	Volker Sluka - Helmholtz-Zentrum Dresden- Rossendorf
	Alina Maria Deac - Helmholtz-Zentrum Dresden- Rossendorf

Abstract

The interaction between spin polarized current and local magnetic moment is studied in magnetic nanopillars for the use in future solid state STT-RAM memory devices.